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Ordering number : ENA1445A
EMH2308
P-Channel Power MOSFET
–20V, –3A, 85m Ω , Single EMH8
Features
http://onsemi.com
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The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
thereby enabling high-density mounting
1.8V drive
Halogen free compliance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--20
±10
--3
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--20
1.0
1.2
150
--55 to +150
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-002
Product & Package Information
? Package : EMH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
0.2
0.125
EMH2308-TL-H
8
5
Packing Type : TL
Marking
MH
1
4
TL
Lot No.
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
EMH8
Electrical Connection
8 7 6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/41509PE MSIM TC-00001891 No. A1445-1/7
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